inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1526 escription drain current C i d =40a@ t c =25 drain source voltage- : v dss =450 (min) applications designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. absolute maximum ratings(t a =25 ) symbol arameter value uni t v dss drain-source voltage (v gs =0) 450 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 40 a p tot total dissipation@tc=25 250 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit rth j-c thermal resistance,junction to case 1.0 /w rth j-a thermal resistance,junction to ambient 50 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1526 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 450 v v gs( th ) gate threshold voltage v ds =10v; i d =1ma 2.0 3.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d =20a 0.11 0.15 i gss gate source leakage current v gs = 25v;v ds = 0 10 ua i dss zero gate voltage drain current v ds =360v; v gs = 0 250 ua v sd diode forward voltage i f =40a; v gs =0 1.2 v tr rise time v gs =10v;i d =20a;r l =1.5 175 ns ton turn-on time 235 ns tf fall time 160 ns toff turn-off time 580 ns pdf pdffactory pro www.fineprint.cn
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